Esaki Diode Circuit Applications
نویسندگان
چکیده
منابع مشابه
Implications of Record Peak Current Density In0.53Ga0.47As Esaki Tunnel Diode on Tunnel FET Logic Applications
Inter-band tunnel field effect transistors (TFETs) have recently gained a lot of interest because of their ability to eliminate the 60mV/dec sub-threshold slope (STS) limitation in MOSFET. This can result in higher ION-IOFF ratio over a reduced gate voltage range, thus predicting TFETs superior for low supply voltage (VDD 0.5V) operation. Unlike Si and Ge, III-V semiconductors like In0.53Ga0....
متن کاملAll-electrical measurements of direct spin Hall effect in GaAs with Esaki diode electrodes
M. Ehlert,1 C. Song,1,2 M. Ciorga,1,* M. Utz,1 D. Schuh,1 D. Bougeard,1 and D. Weiss1 1Institute of Experimental and Applied Physics, University of Regensburg, D-93040 Regensburg, Germany 2Laboratory of Advanced Materials, Department of Material Science & Engineering, Tsinghua University, Beijing 100084, China (Received 12 September 2012; revised manuscript received 24 October 2012; published 2...
متن کاملBand-Edge Steepness Obtained from Esaki/Backward Diode Current-Voltage Characteristics
While science has good knowledge of semiconductor bandgaps, there is not much information regarding the steepness of the band-edges. We find that a plot of absolute conductance, I/V versus voltage, V, in an Esaki diode or a backward diode will reveal a best limit for the band tails, defined by the tunneling joint density of states of the two band-edges. This joint density of states will give in...
متن کاملScanning Tunneling Spectroscopy on InAs–GaSb Esaki Diode Nanowire Devices during Operation
Using a scanning tunneling and atomic force microscope combined with in-vacuum atomic hydrogen cleaning we demonstrate stable scanning tunneling spectroscopy (STS) with nanoscale resolution on electrically active nanowire devices in the common lateral configuration. We use this method to map out the surface density of states on both the GaSb and InAs segments of GaSb-InAs Esaki diodes as well a...
متن کاملSilicon nanowire Esaki diodes.
We report on the fabrication and characterization of silicon nanowire tunnel diodes. The silicon nanowires were grown on p-type Si substrates using Au-catalyzed vapor-liquid-solid growth and in situ n-type doping. Electrical measurements reveal Esaki diode characteristics with peak current densities of 3.6 kA/cm(2), peak-to-valley current ratios of up to 4.3, and reverse current densities of up...
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ژورنال
عنوان ژورنال: The Journal of the Institute of Television Engineers of Japan
سال: 1962
ISSN: 1884-9644
DOI: 10.3169/itej1954.16.736